| 李 秾,于 薇,蒲文华,孙慧娄.全球超宽禁带氧化镓半导体研发态势及启示[J].全球科技经济瞭望,2025,40(4):63~76 |
| 全球超宽禁带氧化镓半导体研发态势及启示 |
| Research and Development Status and Enlightenment of Ultra-wide Band Gap Semiconductor Gallium Oxide |
| 投稿时间：2024-01-29 |
| DOI：10.3772/j.issn.1009-8623.2025.04.009 |
| 中文关键词: 氧化镓；超宽禁带半导体；专利分析；衬底；外延；器件 |
| 英文关键词: gallium oxid; ultra-wide bandgap semiconductor; patent analysis; substrate; epitaxy; device |
| 基金项目:中国科学技术信息研究所重点工作项目“重点科技领域前沿跟踪与深度研究”（ZD2023-08）。 |
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| 中文摘要: |
| 从技术研发态势、相关政策和专利布局角度，对全球超宽禁带氧化镓半导体产业整体和“衬底—外延—器件”三大产业链环节技术发展进行深入分析，归纳当前氧化镓半导体实现大规模实用化面临的关键技术问题，同时对全球主要国家的氧化镓半导体研发实力进行横向对比，分析中国与美国、日本存在的差距，得出重点支持少/ 无铱氧化镓衬底技术研发，全力突破卤化物气相外延技术瓶颈和开展示范性应用推动氧化镓半导体产业突破发展等启示。 |
| 英文摘要: |
| From the perspective of technology research and development situation, relevant policies and patent
layout, the technology development of global ultra-wide bandgap gallium oxide semiconductor industry and the
three industrial chain of substrate-epitaxy-device are deeply analyzed, and the key technical problems that need
to be solved for large-scale practical application of gallium oxide semiconductor are summarized. At the same
time, a horizontal comparison of the research and development capabilities of gallium oxide semiconductors in
major countries around the world was conducted, and the current gap between China and the United States and
Japan was discovered. This led to inspirations such as providing key support for the research and development of
gallium oxide substrate technology by low or free iridium, breaking through the bottleneck of halide vapor phase
epitaxy technology, and conducting demonstration applications to promote the breakthrough development of the
gallium oxide semiconductor industry |
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