| 朱铭辉,李鹏,袁巨龙,周见行.SiC晶片化学力流变复合抛光及其作用机理研究[J].高技术通讯(中文),2025,35(6):640~650 |
| SiC晶片化学力流变复合抛光及其作用机理研究 |
| Study on chemical-assisted shear rheological polishing of silicon carbide and its mechanism |
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| DOI：10. 3772 / j. issn. 1002-0470. 2025. 06. 008 |
| 中文关键词: 碳化硅； 力流变抛光； 化学作用； 抛光液； 作用机理 |
| 英文关键词: silicon carbide, shear rheological polishing, chemical action, polishing solution, mechanism of action |
| 基金项目: |
| 作者 | 单位 | | 朱铭辉 | (浙江工业大学超精密加工研究中心杭州 310023) | | 李鹏 | (浙江工业大学超精密加工研究中心杭州 310023) | | 袁巨龙 | (浙江工业大学超精密加工研究中心杭州 310023) | | 周见行 | (浙江工业大学超精密加工研究中心杭州 310023) |
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| 摘要点击次数: 10 |
| 全文下载次数: 15 |
| 中文摘要: |
| 针对碳化硅（SiC）晶片加工效率低的问题，本文首次进行了化学抛光与力流变抛光相结合的研究。阐述了4H-SiC晶片化学力流变复合抛光（chemical-assisted shear rheological polishing，C-SRP）的原理，并对其加工机理进行研究。在力流变抛光液中加入高锰酸钾(KMnO4)、氢离子浓度指数（hydrogen ion concentration，pH）调节剂等化学试剂，研制了一种适用于4H-SiC晶片的新型化学力流变抛光液。当pH=5、KMnO4浓度为2 wt.%时，化学力流变复合抛光对4H-SiC晶片的加工效果最佳，硅（Si）面粗糙度值可达到0.47nm，材料去除率为37.4nm·min-1；碳（C）面粗糙度值可达到0.35nm，去除率为44.6nm·min-1。通过X射线光电子能谱(X-ray photoelectron spectroscopy，XPS)技术分析了不同条件下4H-SiC晶片表面的化学组分。结果表明，C-SRP过程中生成的氧化物可在抛光过程中被完全去除。Si面表层原子比C面的更难发生氧化反应，并且Si面所产生的氧化物更难被去除，导致Si面的材料去除率始终低于C面。 |
| 英文摘要: |
| In view of the low processing efficiency of silicon carbide (SiC) wafers, this article conducts the study on the combination of chemical and shear rheological polishing. It expounds the principle of chemical-assisted shear rheological polishing (C-SRP) of 4H-SiC wafers and studies its processing mechanism. A new chemical-assisted shear rheological polishing solution suitable for 4H-SiC wafers is developed by adding chemical reagents such as KMnO4 and hydrogen ion concentration (pH) adjustor to the shear rheological polishing solution. When pH=5 and KMnO4 concentration is 2 wt.%, the processing effect of chemical-assisted shear rheological polishing (C-SRP) on 4H-SiC wafers is optimal, and the surface roughness value of Si surface can reach 0.47nm, with material removal rate of 37.4nm·min-1; the surface roughness value of C surface can reach 0.35nm, with material removal rate of 44.6nm·min-1. The chemical composition of the surface of 4H-SiC wafers under different conditions is analyzed by X-ray photoeletron spectroscopy (XPS) technology. The oxide generated during the C-SRP process can be completely removed during the polishing process. The surface atoms of Si surface are more difficult to undergo oxidation reaction than those of C surface, and the oxide generated on Si surface is more difficult to be removed, resulting in the material removal rate of Si surface always being lower than that of C surface. |
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